Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

Distributor Richardson Electronics has announced a technology partner agreement with Pakal Technologies, a US-based silicon ...

Poshun Chiu, Senior Technology & Market Analyst, Compound Semiconductors at Yole Group, discusses the power silicon carbide device market, outlining the anticipated growth to an anticipated $10.

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Singapore has opened the National Semiconductor Translation and Innovation Centre for GaN; the country's first national ...

For the last year Japanese chemical company Resonac and Tohoku University have been exploring using SiC powder, produced from ...

Nordic Semiconductor has announced the new nPM1304 Power Management IC (PMIC). Building on the success formula of the ...

Troubled US SiC semiconductor company Wolfspeed has appointed Gregor Van Issum as CFO, effective September 1, 2025. He ...

Once emerged from the process, Wolfspeed says it expects to have reduced its overall debt by approximately 70 percent, ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...